US 12,255,206 B2
Semiconductor device
Sungil Park, Suwon-si (KR); Jae Hyun Park, Hwaseong-si (KR); Doyoung Choi, Hwaseong-si (KR); Youngmoon Choi, Suwon-si (KR); and Daewon Ha, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Mar. 21, 2022, as Appl. No. 17/699,724.
Claims priority of application No. 10-2021-0105357 (KR), filed on Aug. 10, 2021.
Prior Publication US 2023/0046546 A1, Feb. 16, 2023
Int. Cl. H01L 27/092 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 27/0922 (2013.01) [H01L 21/0259 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823871 (2013.01); H01L 29/0665 (2013.01); H01L 29/41733 (2013.01); H01L 29/42392 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an active pattern extending in a first direction on a substrate;
a first lower source/drain pattern provided on the active pattern;
a second lower source/drain pattern provided on the active pattern and spaced apart from the first lower source/drain pattern in the first direction;
a first upper source/drain pattern provided on the first lower source/drain pattern;
a second upper source/drain pattern provided on the second lower source/drain pattern; and
a gate electrode crossing the active pattern and extending in a second direction intersecting the first direction,
wherein the gate electrode comprises an overlapping portion overlapping the active pattern in a third direction perpendicular to the first direction and the second direction, and
wherein a length of the overlapping portion in the second direction is less than a length of the first lower source/drain pattern in the second direction.