| CPC H01L 27/0255 (2013.01) [H01L 29/0692 (2013.01); H01L 29/861 (2013.01)] | 20 Claims |
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1. An electrostatic discharge (ESD) structure, comprising:
a semiconductor substrate;
a first epitaxy region with a first type of conductivity over the semiconductor substrate;
a second epitaxy region with a second type of conductivity over the semiconductor substrate;
a plurality of semiconductor layers stacked over the semiconductor substrate and between the first and second epitaxy regions;
a first conductive feature formed over the first epitaxy region and outside an oxide diffusion region;
a second conductive feature formed over the second epitaxy region and outside the oxide diffusion region;
a third conductive feature formed over the first epitaxy region and within the oxide diffusion region; and
a fourth conductive feature formed over the second epitaxy region and within the oxide diffusion region,
wherein the oxide diffusion region is disposed between the first and second conductive features,
wherein a width between the first conductive feature and the oxide diffusion region is greater than or equal to a width between the second conductive feature and the oxide diffusion region.
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