US 12,255,183 B2
Semiconductor package including heat dissipation layer
Joo Wan Hong, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (JP)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on May 23, 2023, as Appl. No. 18/322,440.
Application 18/322,440 is a division of application No. 17/234,427, filed on Apr. 19, 2021, granted, now 11,699,684.
Claims priority of application No. 10-2020-0167021 (KR), filed on Dec. 2, 2020.
Prior Publication US 2023/0317683 A1, Oct. 5, 2023
Int. Cl. H01L 25/065 (2023.01); H01L 23/00 (2006.01); H01L 23/13 (2006.01); H01L 23/367 (2006.01); H01L 23/498 (2006.01); H01L 25/18 (2023.01)
CPC H01L 25/0657 (2013.01) [H01L 23/13 (2013.01); H01L 23/367 (2013.01); H01L 23/49833 (2013.01); H01L 23/49838 (2013.01); H01L 24/14 (2013.01); H01L 25/18 (2013.01); H01L 2224/14519 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06586 (2013.01); H01L 2225/06589 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor package comprising:
a package substrate including a cavity;
an interposer disposed on the package substrate and including first and second surfaces opposite to each other;
a heat dissipation layer disposed on the first surface of the interposer;
a first semiconductor die mounted on the first surface of the interposer;
a stack of second semiconductor dies mounted on the second surface of the interposer and positioned in the cavity of the package substrate; and
a thermally conductive connection part for transferring heat from the stack of the second semiconductor dies to the heat dissipation layer,
wherein the package substrate is a connection element electrically connecting the first semiconductor die and the stack of the second semiconductor dies to external devices.