US 12,255,181 B2
Methods for forming three-dimensional memory devices
Kun Zhang, Wuhan (CN); Wenxi Zhou, Wuhan (CN); Zhiliang Xia, Wuhan (CN); and Zongliang Huo, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Dec. 23, 2022, as Appl. No. 18/088,419.
Application 18/088,419 is a continuation of application No. 16/913,649, filed on Jun. 26, 2020, granted, now 11,557,570.
Application 16/913,649 is a continuation of application No. PCT/CN2020/092501, filed on May 27, 2020.
Prior Publication US 2023/0131174 A1, Apr. 27, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/11582 (2017.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01)
CPC H01L 25/0657 (2013.01) [H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02); H01L 2224/08145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2225/06524 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14511 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a three-dimensional (3D) memory device, comprising:
forming a semiconductor layer;
forming a memory stack on the semiconductor layer;
forming a channel structure extending through the memory stack and the semiconductor layer;
exposing an end of the channel structure abutting the semiconductor layer; and
replacing a portion of the channel structure abutting the semiconductor layer with a semiconductor plug.