US 12,255,175 B1
Wafer warpage regulation epoxy functional film, and preparation method and application thereof
De Wu, Wuhan (CN); Qiao Zhou, Wuhan (CN); Shuhang Liao, Wuhan (CN); and Junxing Su, Wuhan (CN)
Assigned to Wuhan Sanxuan Technology Co., Ltd, Wuhan (CN)
Filed by Wuhan Sanxuan Technology Co., Ltd, Wuhan (CN)
Filed on Aug. 21, 2024, as Appl. No. 18/811,589.
Application 18/811,589 is a continuation of application No. PCT/CN2024/088529, filed on Apr. 18, 2024.
Claims priority of application No. 202311157016.9 (CN), filed on Sep. 8, 2023.
Int. Cl. H01L 23/00 (2006.01); C08K 3/04 (2006.01); C08K 3/36 (2006.01); C09D 163/00 (2006.01)
CPC H01L 24/96 (2013.01) [C09D 163/00 (2013.01); C08K 3/04 (2013.01); C08K 3/36 (2013.01); C08K 2201/005 (2013.01); H01L 2224/95001 (2013.01); H01L 2924/3511 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A wafer warpage regulation epoxy functional film, wherein, in percentage by mass, the wafer warpage regulation epoxy functional film consists of 33% of an epoxy resin, 50%-52% of silica, 12%-14% of a curing agent, 1% of a curing accelerator, and 2% of a coloring agent; the epoxy resin comprises a bisphenol F-type epoxy resin and a phenolic epoxy resin; the curing agent comprises a naphthol curing agent; a hydroxyl equivalent of the naphthol curing agent is 100-120 g/eq; the curing accelerator comprises triphenylphosphine; an epoxy equivalent of the bisphenol F-type epoxy resin is 160-180 g/eq; an epoxy equivalent of the phenolic epoxy resin is 180-190 g/eq; the silica comprises fused silica; the particle size D50 of the fused silica is 0.3 μm; and the coloring agent comprises carbon black, with an average particle size of 31 nm.
 
3. A method for regulating wafer warpage, comprising:
in a process of preparing a wafer, attaching a layer of wafer warpage regulation epoxy functional film of claim 1 to a back of a wafer body, after the wafer warpage regulation epoxy functional film is cured, driving the back of the wafer body to warp by means of the wafer warpage regulation epoxy functional film, so as to drive a front of the wafer body to wrap backwards, wherein curing conditions comprise: curing temperature of 220° C., and curing time of 4 h.