US 12,255,174 B2
Bonding passive devices on active dies to form 3D packages
Chen-Hua Yu, Hsinchu (TW); Kuo Lung Pan, Hsinchu (TW); Shu-Rong Chun, Hsinchu (TW); Chi-Hui Lai, Taichung (TW); Tin-Hao Kuo, Hsinchu (TW); Hao-Yi Tsai, Hsinchu (TW); and Chung-Shi Liu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 30, 2022, as Appl. No. 17/809,934.
Application 17/809,934 is a division of application No. 16/806,026, filed on Mar. 2, 2020, granted, now 11,837,575.
Claims priority of provisional application 62/891,730, filed on Aug. 26, 2019.
Prior Publication US 2022/0336410 A1, Oct. 20, 2022
Int. Cl. H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/367 (2006.01); H01L 23/498 (2006.01); H01L 23/64 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 24/94 (2013.01) [H01L 21/56 (2013.01); H01L 23/3121 (2013.01); H01L 23/3672 (2013.01); H01L 23/49861 (2013.01); H01L 23/64 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
bonding an interposer with a package, wherein the package comprises:
a wafer comprising a plurality of device dies therein, wherein semiconductor substrates in the plurality of device dies are continuously connected as an integrated substrate; and
a plurality of passive device dies bonded with the wafer, wherein the plurality of passive device dies are bonded between the interposer and the wafer;
bonding the interposer to a package substrate; and
bonding power modules to the package substrate, wherein the power modules are on an opposing side of the package substrate than the interposer.