| CPC H01L 24/74 (2013.01) [H01L 21/6838 (2013.01); H01L 24/80 (2013.01); H01L 2224/8009 (2013.01); H01L 2224/80093 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01)] | 20 Claims |
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1. A method of bonding wafers, the method comprising:
coupling a first wafer to a first surface of a first wafer chuck and a second wafer to a second surface of a second wafer chuck in a chamber, wherein the first surface of the first wafer chuck comprises a plurality of zones, wherein a vacuum pressure of each zone of the plurality of zones is independently controllable from the rest of the plurality of zones, wherein the first surface is also a topmost surface of the first wafer chuck, and the second surface is also a bottommost surface of the second wafer chuck, and wherein a width of the first wafer chuck is greater than a width of the first wafer;
modulating pressure of the chamber to be at a first pressure by flowing in air/gases into the chamber or removing air/gases from the chamber; and
bonding the second wafer and the first wafer together by pressing the second wafer against the first wafer, wherein the bonding takes place at a first bonding wave velocity that is dependent on the first pressure.
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9. A method comprising:
performing a plasma activation on a surface of at least one of a first package component or a second package component;
supporting the first package component on a wafer platen;
performing a cooling process to cool the first package component, wherein the cooling process comprises flowing water through the wafer platen;
after performing the cooling process, supporting the first package component on a first surface of a first wafer chuck in a chamber, wherein different zones of the first surface of the first wafer chuck have vacuum pressures that are independently controllable;
supporting the second package component on a second surface of a second wafer chuck in the chamber, the second wafer chuck facing the first wafer chuck; and
bonding the first package component to the second package component, wherein the bonding comprises:
modulating pressure of the chamber to be at a first pressure; and
applying pressure to the second package component using a push pin such that the second package component contacts the first package component at a first point and coupling of the second package component to the first package component takes place from the first point moving outwards towards edges of the first package component and the second package component at a first bonding wave velocity, wherein the first bonding wave velocity is based on the first pressure.
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14. A method comprising:
securing a first wafer to a first surface of a top wafer chuck and a second wafer to a second surface of a bottom wafer chuck, the top wafer chuck and the bottom wafer chuck being disposed in a chamber, wherein the second surface of the bottom wafer chuck comprises a first plurality of zones;
tuning a young's modulus and a shear modulus of each portion of the second wafer that is secured to a respective zone of the first plurality of zones on the bottom wafer chuck;
moving the top wafer chuck or the bottom wafer chuck to align the first wafer with the second wafer;
applying pressure to the first wafer using a push pin disposed in the top wafer chuck to warp the first wafer and initiate contact between the first wafer and the second wafer at a first point, wherein during applying pressure to the first wafer using the push pin, bonding between the first wafer and the second wafer begins at the first point and proceeds outwards towards edges of the first wafer and the second wafer; and
during applying pressure to the first wafer using the push pin, modulating pressure of the chamber to be at a first pressure.
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