US 12,255,167 B2
Semiconductor packages with an intermetallic layer
Michael J. Seddon, Gilbert, AZ (US); and Francis J. Carney, Mesa, AZ (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Jun. 24, 2021, as Appl. No. 17/304,715.
Application 15/410,288 is a division of application No. 14/606,667, filed on Jan. 27, 2015, granted, now 9,564,409, issued on Feb. 7, 2017.
Application 17/304,715 is a continuation of application No. 15/410,288, filed on Jan. 19, 2017, granted, now 11,049,833.
Prior Publication US 2021/0327843 A1, Oct. 21, 2021
Int. Cl. H01L 23/00 (2006.01); H01L 21/683 (2006.01); H01L 21/78 (2006.01); H01L 23/482 (2006.01); H01L 21/48 (2006.01)
CPC H01L 24/32 (2013.01) [H01L 21/6836 (2013.01); H01L 21/78 (2013.01); H01L 23/482 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/27 (2013.01); H01L 24/28 (2013.01); H01L 24/29 (2013.01); H01L 24/30 (2013.01); H01L 24/31 (2013.01); H01L 24/33 (2013.01); H01L 24/83 (2013.01); H01L 24/94 (2013.01); H01L 21/4825 (2013.01); H01L 24/03 (2013.01); H01L 24/17 (2013.01); H01L 24/81 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/03416 (2013.01); H01L 2224/03418 (2013.01); H01L 2224/03444 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/0348 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/05075 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11464 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/1308 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13166 (2013.01); H01L 2224/13171 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16503 (2013.01); H01L 2224/16507 (2013.01); H01L 2224/17106 (2013.01); H01L 2224/2908 (2013.01); H01L 2224/29082 (2013.01); H01L 2224/29083 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/29155 (2013.01); H01L 2224/29166 (2013.01); H01L 2224/29171 (2013.01); H01L 2224/29565 (2013.01); H01L 2224/29582 (2013.01); H01L 2224/29655 (2013.01); H01L 2224/29666 (2013.01); H01L 2224/3003 (2013.01); H01L 2224/30505 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/32503 (2013.01); H01L 2224/81439 (2013.01); H01L 2224/8181 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/81825 (2013.01); H01L 2224/83439 (2013.01); H01L 2224/8381 (2013.01); H01L 2224/83815 (2013.01); H01L 2224/83825 (2013.01); H01L 2224/8481 (2013.01); H01L 2224/8581 (2013.01); H01L 2224/8681 (2013.01); H01L 2224/94 (2013.01); H01L 2924/00015 (2013.01); H01L 2924/01327 (2013.01); H01L 2924/10162 (2013.01); H01L 2924/12041 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor package, comprising:
a plurality of exposed pads on a top side of a die;
a passivation layer on the top side of the die surrounding each exposed pad; and
a bump coupled to each of the plurality of exposed pads;
wherein each bump comprises a titanium sublayer, a nickel sublayer, and one of a silver and tin intermetallic layer or a copper and tin intermetallic layer, the one of the silver and tin intermetallic layer or the copper and tin intermetallic layer having a melting temperature greater than 260 degrees Celsius;
wherein the one of the silver and tin intermetallic layer or the copper and tin intermetallic layer is formed by reflowing a tin layer and one of a silver layer or copper layer with a silver layer of a substrate;
wherein the substrate is directly coupled onto the one of the silver and tin intermetallic layer or the copper and tin intermetallic layer, the substrate comprising a copper layer that was directly coupled onto the silver layer before the one of the silver and tin intermetallic layer or the copper and tin intermetallic layer was reflowed.