US 12,255,166 B2
Semiconductor package structure comprising via structure and redistribution layer structure
Neng-Chieh Chang, Tainan (TW); Po-Hao Tsai, Taoyuan (TW); Ming-Da Cheng, Taoyuan (TW); Wen-Hsiung Lu, Tainan (TW); and Hsu-Lun Liu, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Oct. 11, 2023, as Appl. No. 18/484,609.
Application 18/484,609 is a division of application No. 17/460,647, filed on Aug. 30, 2021, granted, now 11,817,413.
Prior Publication US 2024/0047403 A1, Feb. 8, 2024
Int. Cl. H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 25/10 (2006.01)
CPC H01L 24/20 (2013.01) [H01L 21/561 (2013.01); H01L 24/19 (2013.01); H01L 24/24 (2013.01); H01L 24/82 (2013.01); H01L 24/96 (2013.01); H01L 25/105 (2013.01); H01L 24/04 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/19 (2013.01); H01L 2224/214 (2013.01); H01L 2224/215 (2013.01); H01L 2224/24175 (2013.01); H01L 2224/821 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor package structure, comprising:
a conductive pad formed over a substrate;
a passivation layer formed over the conductive pad;
a first via structure formed through the passivation layer and in contact with the conductive pad;
a first encapsulating material surrounding the first via structure; and
a redistribution layer structure formed over the first via structure,
wherein the first encapsulating material is disposed between the redistribution layer structure and the passivation layer, the first via structure has a lateral extending portion embedded in the first encapsulating material near a top surface of the first via structure, and the lateral extending portion has a width increasing in a direction toward the redistribution layer structure.