| CPC H01L 23/645 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01); H01F 27/24 (2013.01); H01F 2027/2809 (2013.01)] | 20 Claims |

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1. A method, comprising:
forming an interconnect structure over a semiconductor substrate, wherein the interconnect structure comprises:
a magnetic core;
a conductive coil winding around the magnetic core and electrically insulated from the magnetic core, wherein the conductive coil comprises horizontally-extending conductive lines and vertically-extending conductive vias electrically connecting the horizontally-extending conductive lines, wherein the magnetic core and the conductive coil are arranged in an inductor zone of the interconnect structure; and
a connecting metal line adjacent to and on an outside of the inductor zone, the connecting metal line being electrical isolated from the inductor zone,
wherein the vertically-extending conductive vias comprise first conductive vias in contact with a first one of the horizontally-extending conductive lines, second conductive vias overlapping the first conductive vias and in contact with a second one of the horizontally-extending conductive lines opposite to the first one of the horizontally-extending conductive lines, and a third conductive via between the first conductive vias and the second conductive vias,
wherein the connecting metal line is between, and non-overlapped with, the first conductive via and the second conductive vias vertically from a cross-sectional view.
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