US 12,255,152 B2
Semiconductor device and method of forming a slot in EMI shielding with improved removal depth
ChangOh Kim, Incheon (KR); JinHee Jung, Incheon (KR); JiWon Lee, Seoul (KR); and YuJeong Jang, Incheon (KR)
Assigned to STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed by STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed on Jul. 26, 2023, as Appl. No. 18/359,688.
Application 18/359,688 is a division of application No. 17/308,410, filed on May 5, 2021, granted, now 11,756,897.
Prior Publication US 2023/0369241 A1, Nov. 16, 2023
Int. Cl. H01L 23/552 (2006.01); H01L 21/3213 (2006.01); H01L 23/31 (2006.01); H01L 25/065 (2023.01)
CPC H01L 23/552 (2013.01) [H01L 21/32131 (2013.01); H01L 23/3107 (2013.01); H01L 25/0655 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a first semiconductor die disposed over the substrate;
a second semiconductor die disposed over the substrate;
a conductive post disposed over the substrate between the first semiconductor die and second semiconductor die;
an encapsulant deposited over the substrate;
a shielding layer formed over the encapsulant and on the conductive post; and
a first slot formed in the shielding layer over the first semiconductor die, wherein the first slot includes,
a first linear portion,
a second linear portion oriented perpendicular to the first linear portion, and
a curved portion connecting the first linear portion and the second linear portion.