US 12,255,146 B2
Interconnection structure with composite isolation feature and method for manufacturing the same
Tse-Yao Huang, Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (CN)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Jun. 12, 2023, as Appl. No. 18/208,495.
Application 18/208,495 is a division of application No. 17/881,831, filed on Aug. 5, 2022.
Prior Publication US 2024/0047361 A1, Feb. 8, 2024
Int. Cl. H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01)
CPC H01L 23/5329 (2013.01) [H01L 21/7682 (2013.01); H01L 23/528 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a first dielectric layer disposed over the substrate;
a first electrically conductive structure disposed over the first dielectric layer;
a second electrically conductive structure disposed over the first dielectric layer;
a second dielectric layer, being a single layer disposed over and in direct contact with the first electrically conductive structure,
wherein a lateral surface of the second dielectric layer is exposed to an air gap;
wherein the first electrically conductive structure is spaced apart from the second electrically conductive structure by the air gap;
wherein the lateral surface of the second dielectric layer is noncoplanar with a lateral surface of the first electrically conductive structure.