US 12,255,144 B2
Graphene liners and caps for semiconductor structures
Shu-Cheng Chin, Hsinchu (TW); Chih-Yi Chang, New Taipei (TW); Chih-Chien Chi, Hsinchu (TW); and Ming-Hsing Tsai, Chu-Pei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Jan. 11, 2022, as Appl. No. 17/647,624.
Claims priority of provisional application 63/263,959, filed on Nov. 12, 2021.
Prior Publication US 2023/0154850 A1, May 18, 2023
Int. Cl. H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01)
CPC H01L 23/53238 (2013.01) [H01L 21/76804 (2013.01); H01L 21/7684 (2013.01); H01L 21/76846 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a copper conductive structure formed in a dielectric layer and below at least one etch stop layer (ESL); and
a bi-layer liner adjacent to the copper conductive structure, where in the bi-layer liner comprises a first layer of graphene adjacent to the copper conductive structure and a second layer adjacent to the first layer and at an interface between the copper conductive structure and a first conductive structure below the copper conductive structure,
wherein a ratio of a thickness of the second layer to a thickness of the first layer of graphene is in a range from approximately two to approximately twenty.