US 12,255,142 B2
Cell structure with intermediate metal layers for power supplies
Li-Chun Tien, Tainan (TW); Chih-Liang Chen, Hsinchu (TW); Hui-Zhong Zhuang, Kaohsiung (TW); Shun Li Chen, Hsinchu (TW); and Ting Yu Chen, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 10, 2023, as Appl. No. 18/448,005.
Application 18/448,005 is a continuation of application No. 17/728,007, filed on Apr. 25, 2022, granted, now 11,764,155.
Application 17/728,007 is a continuation of application No. 17/021,051, filed on Sep. 15, 2020, granted, now 11,315,874, issued on Apr. 26, 2022.
Prior Publication US 2023/0387015 A1, Nov. 30, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/528 (2006.01); H01L 21/8238 (2006.01); H01L 23/522 (2006.01); H01L 27/092 (2006.01)
CPC H01L 23/5286 (2013.01) [H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 23/5226 (2013.01); H01L 27/0924 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A cell on an integrated circuit, comprising:
a fin structure;
an intermediate fin structure connection metal track disposed in an intermediate fin structure connection metal layer above the fin structure, the intermediate fin structure connection metal track being connected to the fin structure;
a first intermediate gate connection metal track disposed in an intermediate gate connection metal layer above the intermediate fin structure connection metal layer, the first intermediate gate connection metal track being connected to the intermediate fin structure connection metal track; and
a second intermediate gate connection metal track disposed in the intermediate gate connection metal layer, wherein both the first intermediate gate connection metal track and the second intermediate gate connection metal track extend in a first direction, wherein the first intermediate gate connection metal track is located at a top of the cell in a second direction perpendicular to the first direction, and wherein the second intermediate gate connection metal track is located at a bottom of the cell in the second direction.