US 12,255,139 B2
Semiconductor devices
Anthony Dongick Lee, Hwaseong-si (KR); Sangcheol Na, Seoul (KR); Kichul Park, Suwon-si (KR); Sungyup Jung, Seoul (KR); and Youngwoo Cho, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on May 24, 2022, as Appl. No. 17/751,819.
Claims priority of application No. 10-2021-0116472 (KR), filed on Sep. 1, 2021.
Prior Publication US 2023/0065281 A1, Mar. 2, 2023
Int. Cl. H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01)
CPC H01L 23/528 (2013.01) [H01L 21/76832 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/53295 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first insulating structure on a substrate, the first insulating structure including a first etch stop layer and a first interlayer insulating layer on the first etch stop layer;
a second insulating structure on the first insulating structure, the second insulating structure including a second etch stop layer and a second interlayer insulating layer on the second etch stop layer;
a conductive line penetrating through the second insulating structure, and extending in a first direction parallel to an upper surface of the substrate; and
a plurality of contacts penetrating through the first insulating structure, and connected to the conductive line,
wherein the conductive line includes a protrusion extending further downwardly than the second insulating structure, the protrusion penetrating through the first interlayer insulating layer and being in contact with the first etch stop layer,
wherein a level of a lower surface of the protrusion is higher than a level of a lower surface of the plurality of contacts, and
wherein the protrusion includes a first region having a first width and a second region having a second width, in a second direction perpendicular to the first direction, the second width being narrower than the first width.