US 12,255,136 B2
Semiconductor structure and method for manufacturing having the conductive portions isolated from each other by an insulating 2D material
Cheng-Hsien Lu, Taoyuan (TW); Yun-Yuan Wang, Kaohsiung (TW); Ming-Hsiu Lee, Hsinchu (TW); and Dai-Ying Lee, Hsinchu County (TW)
Assigned to MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed by MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed on May 19, 2022, as Appl. No. 17/748,111.
Prior Publication US 2023/0378053 A1, Nov. 23, 2023
Int. Cl. H01L 23/522 (2006.01); H01L 23/532 (2006.01)
CPC H01L 23/5226 (2013.01) [H01L 23/53209 (2013.01); H01L 23/53276 (2013.01); H01L 23/5329 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a substrate; and
a via structure through the substrate, the via structure comprising:
a first conductive portion, the first conductive portion having a ring-shaped cross section;
a second conductive portion disposed at an inner side of the first conductive portion, the second conductive portion having a ring-shaped cross section;
a first barrier portion disposed at an outer side of the first conductive portion;
a second barrier portion disposed between the first conductive portion and the second conductive portion; and
a third barrier portion disposed at an inner side of the second conductive portion;
wherein at least one of the first barrier portion, the second barrier portion, or the third barrier portion comprises an insulating 2D material.