| CPC H01L 23/5226 (2013.01) [H01L 23/528 (2013.01); H01L 29/42392 (2013.01); H01L 29/7851 (2013.01); H01L 29/78696 (2013.01)] | 20 Claims |
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1. A semiconductor device comprising:
a lower wiring comprising:
a lower filling film, which extends in a first direction and comprises a first portion having a first width in the first direction and a second portion, having a second width smaller than the first width in the first direction, on the first portion; and
a lower barrier film which is disposed on a side wall and a bottom surface of the first portion, and is not disposed on a side wall of the second portion in a cross-sectional view of the first direction; and
an upper wiring structure comprising:
an upper via connected to the lower wiring; and
an upper wiring extending in a second direction intersecting the first direction on the upper via,
wherein the upper via has a shorter width than the upper wiring in the second direction, and takes a form of protrusion from a bottom surface of the upper wiring facing the lower wiring in a third direction intersecting the first direction and the second direction,
wherein the upper wiring structure further comprises an upper barrier film, and an upper filling film in a trench defined by the upper barrier film,
wherein each of the upper via and the upper wiring comprises the upper barrier film and the upper filling film, and
wherein the upper via is not separated from the upper wiring by the upper barrier film, and is separated from the second portion of the lower filling film by the upper barrier film.
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