| CPC H01L 23/5226 (2013.01) [H01L 21/76805 (2013.01); H01L 21/76834 (2013.01); H01L 23/5256 (2013.01); H01L 29/66545 (2013.01)] | 20 Claims |
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1. A method, comprising:
forming an isolation structure in a substrate;
forming a conductive structure over the isolation structure;
forming an interlayer dielectric over the conductive structure;
etching the interlayer dielectric to form a first opening, wherein the first opening exposes the conductive structure and the isolation structure; and
filling a conductive material in the first opening to form a first contact structure.
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10. A method, comprising:
forming an isolation structure in a substrate;
forming a polycrystalline structure over the isolation structure;
forming an interlayer dielectric over the polycrystalline structure;
etching a first opening extending through the interlayer dielectric, the polycrystalline structure into the isolation structure; and
forming a first contact structure in the first opening.
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17. A method, comprising:
forming a polysilicon structure over a shallow trench isolation (STI) region;
forming an interlayer dielectric over the polysilicon structure;
forming a plurality of first openings each extending through the interlayer dielectric and the polysilicon structure, the plurality of first openings being spaced apart at least by the polysilicon structure; and
forming a plurality of first contact structures in the plurality of first openings, respectively.
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