US 12,255,120 B2
Semiconductor device and method of manufacturing the same
Yoshitaka Kato, Nisshin (JP); Takeshi Endo, Nisshin (JP); and Kazuhiro Tsuruta, Nisshin (JP)
Assigned to DENSO CORPORATION, Kariya (JP); TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota (JP); and MIRISE Technologies Corporation, Nisshin (JP)
Filed by DENSO CORPORATION, Kariya (JP); TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota (JP); and MIRISE Technologies Corporation, Nisshin (JP)
Filed on May 25, 2022, as Appl. No. 17/824,004.
Claims priority of application No. 2021-094356 (JP), filed on Jun. 4, 2021.
Prior Publication US 2022/0392828 A1, Dec. 8, 2022
Int. Cl. H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/433 (2006.01)
CPC H01L 23/4334 (2013.01) [H01L 21/565 (2013.01); H01L 23/3142 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a power module including
a power semiconductor element,
a signal wire connected to the power semiconductor element, and
a first mold resin portion sealing the power semiconductor element and the signal wire while exposing a part of the signal wire;
a circuit package including
a semiconductor element,
a wiring layer including an insulating layer and a metal wiring, the metal wiring disposed in the insulating layer and electrically connected to the semiconductor element, the metal wiring including a connecting portion,
a heat conductive member disposed at a position different from the semiconductor element and connected with the connecting portion included in the metal wiring, and
a second mold resin portion sealing the semiconductor element and the heat conductive member; and
a joint portion disposed between the power module and the circuit package and joining the power module and the circuit package, wherein
one of the connecting portion or the heat conductive member is joined with the signal wire via the joint portion,
the heat conductive member penetrates the second mold resin portion in a thickness direction of the semiconductor element, and
the heat conductive member and the connecting portion are arranged in a straight line in the thickness direction of the semiconductor element.