US 12,255,116 B2
Semiconductor structure and manufacturing method thereof
Ming-Fa Chen, Taichung (TW); Ta-Hao Sung, Yilan County (TW); and Sung-Feng Yeh, Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Mar. 24, 2022, as Appl. No. 17/702,820.
Prior Publication US 2023/0307306 A1, Sep. 28, 2023
Int. Cl. H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/24 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 23/00 (2006.01); H01L 23/29 (2006.01); H01L 25/10 (2006.01); H01L 25/18 (2023.01)
CPC H01L 23/3185 (2013.01) [H01L 21/568 (2013.01); H01L 23/24 (2013.01); H01L 23/3192 (2013.01); H01L 25/0652 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01); H01L 23/291 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/13 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 25/105 (2013.01); H01L 25/18 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/29188 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/83005 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
first semiconductor dies spaced apart from one another;
second semiconductor dies stacked upon the first semiconductor dies with a one-to-one correspondence and electrically coupled to the first semiconductor dies;
a first composite structure laterally interposed between adjacent two of the first semiconductor dies, the first composite structure comprising a first protective liner adjoining sidewalls of the two of the first semiconductor dies and a first gap-filling layer connected to the first protective liner, wherein a material of the first protective liner is different from a material of the first gap-filling layer;
a second composite structure laterally interposed between adjacent two of the second semiconductor dies, the second composite structure comprising a second protective liner adjoining sidewalls of the two of the second semiconductor dies and a second gap-filling layer connected to second protective liner, wherein a material of the second protective liner is different from a material of the second gap-filling layer; and
a support substrate bonded to the second semiconductor dies and the second composite structure.