US 12,255,112 B2
Test key and semiconductor die including the same
Tse-Pan Yang, Hsinchu (TW); Wei Lee, Hsinchu (TW); Kuo-Pei Lu, Hsinchu County (TW); and Jen-Yuan Chang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Mar. 14, 2022, as Appl. No. 17/693,439.
Prior Publication US 2023/0290694 A1, Sep. 14, 2023
Int. Cl. H01L 21/66 (2006.01); G01R 31/28 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 49/02 (2006.01)
CPC H01L 22/30 (2013.01) [G01R 31/2884 (2013.01); H01L 23/481 (2013.01); H01L 23/49822 (2013.01); H01L 28/20 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A test key configured to measure resistance of a through semiconductor via in a semiconductor substrate, the test key comprising:
a first resistor;
a first conductor;
a first probe pad electrically connected to a first end of the through semiconductor via by the first resistor and the first conductor;
a second conductor;
a second probe pad electrically connected to the first end of the through semiconductor via by the second conductor;
a third conductor;
a third probe pad electrically connected to a second end of the through semiconductor via by the third conductor;
a fourth conductor; and
a fourth probe pad electrically connected to the second end of the through semiconductor via by the fourth conductor.