US 12,255,108 B2
Nanowire-based interconnects for sub-millimeter wave integrated circuit applications
Rhonda Franklin, Minneapolis, MN (US); Aditya Dave, Minneapolis, MN (US); Yali Zhang, Minneapolis, MN (US); Bethanie Joyce Hills Stadler, Minneapolis, MN (US); Allison Harpel, Minneapolis, MN (US); Rashaunda Henderson, Austin, TX (US); and Nikita Mahjabeen, Austin, TX (US)
Assigned to Regents of the University of Minnesota, Minneapolis, MN (US); and The University of Texas at Dallas, Richardson, TX (US)
Filed by Regents of the University of Minnesota, Minneapolis, MN (US); and Board of Regents, The University of Texas System, Austin, TX (US)
Filed on Jun. 17, 2022, as Appl. No. 17/843,933.
Prior Publication US 2023/0411221 A1, Dec. 21, 2023
Int. Cl. G01R 31/28 (2006.01); H01L 21/8238 (2006.01); H01L 23/66 (2006.01); H01L 29/06 (2006.01); H01P 11/00 (2006.01)
CPC H01L 21/823871 (2013.01) [G01R 31/2887 (2013.01); H01L 23/66 (2013.01); H01L 29/0669 (2013.01); H01P 11/003 (2013.01); H01L 2221/1078 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a substrate; and
at least one electrically conducting portion supported by the substrate, the at least one electrically conducting portion comprising a signal line extending from a first port to a second port, and a ground plane electrically isolated from the signal line,
wherein the electrically conducting portion comprises a layer of a first electrically conducting material and a layer of a metal oxide material comprising anodic aluminum oxide (AAO) and one or more nanowires (NW) of a second electrically conducting material each formed within a corresponding pore extending through the AAO from a first side of the layer to a second side of the layer of the metal oxide material opposite the first side,
wherein the signal line comprises a layer of a third electrically conducting material, wherein the layer of the metal oxide is arranged between the layer of the first electrically conducting material and the layer of the third electrically conducting material, the layer of third electrically conducting material extending continuously between the first port and the second port.