US 12,255,094 B2
Semiconductor device
Jun Hyuk Lim, Hwaseong-si (KR); Jong Min Baek, Seoul (KR); Deok Young Jung, Seoul (KR); Sung Jin Kang, Seoul (KR); and Jang Ho Lee, Incheon (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on May 7, 2022, as Appl. No. 17/739,114.
Claims priority of application No. 10-2021-0071632 (KR), filed on Jun. 2, 2021.
Prior Publication US 2022/0392800 A1, Dec. 8, 2022
Int. Cl. H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01)
CPC H01L 21/76829 (2013.01) [H01L 21/76816 (2013.01); H01L 21/76841 (2013.01); H01L 21/76877 (2013.01); H01L 21/823468 (2013.01); H01L 23/5226 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an etching stop film which is disposed on a substrate;
an interlayer insulating film which is disposed on the etching stop film;
a trench which penetrates the interlayer insulating film and the etching stop film;
a spacer which extends along side walls of the trench;
a barrier film which extends along the spacer and a bottom surface of the trench; and
a filling film which fills the trench on the barrier film,
wherein the trench includes a first trench and a second trench which are spaced apart from each other in a first direction and have different widths from each other in the first direction, and
wherein a bottom surface of the second trench is disposed below a bottom surface of the first trench.