US 12,255,091 B2
Semiconductor processing apparatus and method utilizing electrostatic discharge (ESD) prevention layer
Tsai-Hao Hung, Hsinchu (TW); Ping-Cheng Ko, Hsinchu (TW); Tzu-Yang Lin, Hsinchu (TW); Fang-Yu Liu, Hsinchu (TW); and Cheng-Han Wu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Nov. 21, 2023, as Appl. No. 18/516,703.
Application 18/516,703 is a continuation of application No. 18/055,784, filed on Nov. 15, 2022, granted, now 11,854,860.
Application 18/055,784 is a continuation of application No. 17/182,782, filed on Feb. 23, 2021, granted, now 11,532,499, issued on Dec. 20, 2022.
Application 17/182,782 is a continuation of application No. 16/559,089, filed on Sep. 3, 2019, granted, now 10,950,485, issued on Mar. 16, 2021.
Claims priority of provisional application 62/835,365, filed on Apr. 17, 2019.
Prior Publication US 2024/0087945 A1, Mar. 14, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/687 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01); H01L 21/677 (2006.01); H05F 1/00 (2006.01)
CPC H01L 21/68757 (2013.01) [H01L 21/67167 (2013.01); H01L 21/67173 (2013.01); H01L 21/6719 (2013.01); H01L 21/67196 (2013.01); H01L 21/67201 (2013.01); H01L 21/67242 (2013.01); H01L 21/67742 (2013.01); H01L 22/10 (2013.01); H05F 1/00 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor processing apparatus, comprising:
a wafer handling structure, the wafer handling structure configured to support a semiconductor wafer during processing of the semiconductor wafer in the semiconductor processing apparatus; and
an electrostatic discharge (ESD) prevention layer on the wafer handling structure, the ESD prevention layer including a first material and a second material, the second material having an electrical conductivity that is greater than an electrical conductivity of the first material,
wherein the ESD prevention layer includes a homogeneous mixture of the first material and the second material, and wherein the ESD prevention layer further includes at least one additive material, the at least one additive material including at least one of an anti-acid material, an anti-base material, or an anti-extreme ultraviolet (EUV) material.