| CPC H01L 21/565 (2013.01) [H01L 21/67126 (2013.01); H01L 23/293 (2013.01); H01L 23/3142 (2013.01); H01L 23/315 (2013.01); H01L 23/49575 (2013.01); H01L 23/49861 (2013.01); H01L 21/4839 (2013.01); H01L 23/49513 (2013.01); H01L 23/49568 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48245 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/1811 (2013.01); H01L 2924/182 (2013.01); H01L 2924/183 (2013.01); H01L 2924/186 (2013.01)] | 18 Claims |

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1. A semiconductor manufacturing apparatus, in which a cavity extending in a first direction is formed with a mold die including a lower die and an upper die, a lead frame provided with a semiconductor element and having a large die pad and a small die pad is arranged in the cavity, and a sealing material is injected into the cavity to seal the lead frame together with the semiconductor element, the semiconductor manufacturing apparatus comprising:
a sealing material injection gate through which the sealing material is injected into the cavity in the first direction;
at least one sealing material reservoir arranged on an other side at a distance in the first direction from one side on which the sealing material injection gate is arranged with the cavity interposed, the sealing material reservoir storing the sealing material flowing through the cavity; and
a sealing material reservoir gate communicatively connecting the cavity and the sealing material reservoir, wherein
the sealing material injection gate has a first opening cross-sectional area,
the sealing material reservoir gate has a second opening cross-sectional area,
the second opening cross-sectional area is smaller than the first opening cross-sectional area, and
the sealing material injection gate is located at a position closer to the large die pad than to the small die pad.
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