CPC H01L 21/561 (2013.01) [H01L 21/568 (2013.01); H01L 21/78 (2013.01); H01L 23/5389 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 25/0655 (2013.01); H01L 2224/0233 (2013.01); H01L 2224/02379 (2013.01); H01L 2224/04105 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01)] | 20 Claims |
1. A structure comprising:
a first die, the first die comprising:
a first material layer,
a first set of through-vias embedded in the first material layer, the first set of through-vias having a width which expands wider from top to bottom,
a first set of connectors disposed over a first side of the first material layer, and
a second set of connectors disposed under a second side of the first material layer;
a first semiconductor device coupled to the first set of connectors;
a first encapsulant laterally surrounding the first semiconductor device;
a second encapsulant laterally surrounding the first die; and
a third encapsulant laterally surrounding the first encapsulant and the second encapsulant.
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