US 12,255,079 B2
Semiconductor package and method of manufacturing the same
Chin-Chuan Chang, Zhudong Township (TW); Szu-Wei Lu, Hsinchu (TW); and Chen-Hua Yu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 9, 2022, as Appl. No. 17/884,037.
Application 17/884,037 is a division of application No. 17/097,857, filed on Nov. 13, 2020, granted, now 11,929,261.
Claims priority of provisional application 63/018,595, filed on May 1, 2020.
Prior Publication US 2022/0384212 A1, Dec. 1, 2022
Int. Cl. H01L 23/538 (2006.01); H01L 21/56 (2006.01); H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 21/561 (2013.01) [H01L 21/568 (2013.01); H01L 21/78 (2013.01); H01L 23/5389 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 25/0655 (2013.01); H01L 2224/0233 (2013.01); H01L 2224/02379 (2013.01); H01L 2224/04105 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a first die, the first die comprising:
a first material layer,
a first set of through-vias embedded in the first material layer, the first set of through-vias having a width which expands wider from top to bottom,
a first set of connectors disposed over a first side of the first material layer, and
a second set of connectors disposed under a second side of the first material layer;
a first semiconductor device coupled to the first set of connectors;
a first encapsulant laterally surrounding the first semiconductor device;
a second encapsulant laterally surrounding the first die; and
a third encapsulant laterally surrounding the first encapsulant and the second encapsulant.