US 12,255,078 B2
Semiconductor devices and methods of manufacturing
Po-Chen Lai, Hsinchu (TW); Ming-Chih Yew, Hsinchu (TW); Po-Yao Lin, Zhudong Township (TW); Chien-Sheng Chen, Hsinchu (TW); and Shin-Puu Jeng, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 10, 2023, as Appl. No. 18/447,443.
Application 18/447,443 is a division of application No. 17/346,972, filed on Jun. 14, 2021, granted, now 11,854,837.
Claims priority of provisional application 63/178,094, filed on Apr. 22, 2021.
Prior Publication US 2023/0386863 A1, Nov. 30, 2023
Int. Cl. H01L 21/00 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01)
CPC H01L 21/56 (2013.01) [H01L 23/315 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a redistribution structure;
a first semiconductor die attached to the redistribution structure; and
an encapsulant encapsulating the first semiconductor die; and
a first opening extending into the encapsulant a first distance from a first surface, the first distance being less than a height of the encapsulant, the first surface being planar with the first semiconductor die, a bottom surface of the first opening being the encapsulant, wherein the first opening has a “C” shape.