| CPC H01L 21/31122 (2013.01) | 7 Claims |
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1. An atomic layer etching method using a ligand exchange reaction, the atomic layer etching method comprising:
a substrate providing step of putting a substrate with a thin film formed thereon into a reaction chamber;
a halogenated thin film forming step of forming a halogenated thin film on a surface of the thin film by infusing a halogenated gas into the reaction chamber; and
an etching step of etching the halogenated thin film by infusing a ligand without a metal or metal precursor into the reaction chamber with the substrate with the halogenated thin film,
wherein the ligand without a metal or metal precursor includes 1,3-diketimines, and
wherein the halogenated thin film forming step and the etching step are combined as a single cycle that is repeatedly performed 400 times to 500 times.
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