US 12,255,072 B2
Method of processing substrate, substrate processing apparatus, recording medium, and method of manufacturing semiconductor device
Masato Kawanishi, Toyama (JP); Takumi Ito, Toyama (JP); and Kimihiko Nakatani, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed on May 27, 2022, as Appl. No. 17/826,332.
Claims priority of application No. 2021-107284 (JP), filed on Jun. 29, 2021.
Prior Publication US 2022/0415659 A1, Dec. 29, 2022
Int. Cl. H01L 21/3065 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/3065 (2013.01) [H01L 21/67069 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
(a) supplying a first gas containing a group XIV element to the substrate on which a film containing the group XIV element is formed, to thereby:
generate reaction by-products by reaction with the group XIV element contained in the film,
dissociate the generated reaction by-products from the substrate to form dissociated reaction by-products, and
re-adsorb the dissociated reaction by-products on the substrate;
(b) supplying a second gas containing a halogen after (a); and
(c) etching the film containing the group XIV element formed on the substrate by alternately repeating (a) and (b).
 
18. A substrate processing apparatus comprising:
a gas supply system configured to supply a first gas containing a group XIV element and a second gas containing a halogen to a substrate on which a film containing the group XIV element is formed, in a process container; and
a controller configured to be capable of controlling the gas supply system so as to perform a process including:
(a) supplying the first gas to the substrate, to thereby:
generate reaction by-products by reaction with the group XIV element contained in the film;
dissociate the generated reaction by-products from the substrate; and
re-adsorb the dissociated reaction by-products on the substrate;
(b) supplying the second gas to the substrate after (a); and
(c) etching the film containing the group XIV element formed on the substrate by alternately repeating (a) and (b).