US 12,255,070 B2
Semiconductor devices and methods of manufacturing
Min-Hsuan Lu, Hsinchu (TW); Kan-Ju Lin, Kaohsiung (TW); Lin-Yu Huang, Hsinchu (TW); Sheng-Tsung Wang, Hsinchu (TW); Hung-Yi Huang, Hsinchu (TW); Chih-Wei Chang, Hsinchu (TW); Ming-Hsing Tsai, Chu-Pei (TW); and Chih-Hao Wang, Baoshan Township (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Sep. 30, 2021, as Appl. No. 17/491,161.
Claims priority of provisional application 63/188,960, filed on May 14, 2021.
Prior Publication US 2022/0367194 A1, Nov. 17, 2022
Int. Cl. H01L 21/285 (2006.01); C23C 16/42 (2006.01); H01L 29/40 (2006.01)
CPC H01L 21/28518 (2013.01) [C23C 16/42 (2013.01); H01L 29/401 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor device structure, comprising:
performing a deposition process to form a silicide layer;
performing a deposition process to form a dielectric layer over the silicide layer;
performing an etching process to form an opening in the dielectric layer that exposes the silicide layer, the opening having a sidewall;
performing a physical deposition process to form a first conductive feature over the silicide layer;
performing a deposition process to form a glue layer that extends along the sidewall above the first conductive feature to a top surface of the dielectric layer and along a top surface of the first conductive feature;
performing a chemical deposition process to form a second conductive feature in the opening and in contact with the glue layer disposed along the sidewall and the top surface of the first conductive feature, the second conductive feature extending to the top surface of the dielectric layer; and
performing a deposition process to form a contact etch stop layer directly over a portion of an uppermost surface of the second conductive feature.