US 12,255,067 B2
Method for depositing layers directly adjacent uncovered vias or contact holes
John Hautala, Beverly, MA (US); and Charith Nanayakkara, Gloucester, MA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on May 23, 2022, as Appl. No. 17/751,609.
Prior Publication US 2023/0377888 A1, Nov. 23, 2023
Int. Cl. H01L 21/00 (2006.01); H01L 21/033 (2006.01)
CPC H01L 21/0337 (2013.01) 17 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a plurality of openings in a semiconductor structure, wherein the semiconductor structure comprises a photoresist; and
forming a film layer directly atop the photoresist by delivering a material at a non-zero angle relative to a normal extending perpendicular from an upper surface of the semiconductor structure, wherein the film layer is formed along the upper surface of the photoresist without being formed along a sidewall of each opening of the plurality of openings, and wherein an opening though the film layer remains above each opening of the plurality of openings.