US 12,255,066 B2
Method for producing non-contiguous metal oxide semiconductors, of uniform and controlled size and density
Pierre-Vincent Guenery, Saint-Berthevin (FR); Thierry Baron, Saint-Egreve (FR); and Jeremy Moeyaert, Grenoble (FR)
Assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR); CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris (FR); UNIVERSITE GRENOBLE ALPES, Saint Martin d'Heres (FR); INSTITUT NATIONAL DES SCIENCES APPLIQUEES DE LYON, Villeurbanne (FR); UNIVERSITE CLAUDE BERNARD LYON 1, Villeurbanne (FR); ECOLE CENTRALE DE LYON, Ecully (FR); and ECOLE SUPERIEURE CHIMIE PHYSIQUE ELECTRONIQUE LYON, Villeurbanne (FR)
Appl. No. 17/780,624
Filed by COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR); CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris (FR); UNIVERSITE GRENOBLE ALPES, Saint Martin d'Heres (FR); INSTITUT NATIONAL DES SCIENCES APPLIQUEES DE LYON, Villeurbanne (FR); UNIVERSITE CLAUDE BERNARD LYON 1, Villeurbanne (FR); ECOLE CENTRALE DE LYON, Ecully (FR); and ECOLE SUPERIEURE CHIMIE PHYSIQUE ELECTRONIQUE LYON, Villeurbanne (FR)
PCT Filed Nov. 26, 2020, PCT No. PCT/EP2020/083488
§ 371(c)(1), (2) Date May 27, 2022,
PCT Pub. No. WO2021/105273, PCT Pub. Date Jun. 3, 2021.
Claims priority of application No. 1913421 (FR), filed on Nov. 28, 2019.
Prior Publication US 2023/0360912 A1, Nov. 9, 2023
Int. Cl. C23C 16/18 (2006.01); C23C 16/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/02565 (2013.01) [C23C 16/0281 (2013.01); C23C 16/407 (2013.01); C23C 16/45523 (2013.01); C23C 16/56 (2013.01); H01L 21/0262 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method for producing nanostructures having a metal oxide shell, carried by a top face of a substrate in which a greatest dimension is greater than or equal to 100 mm by MOCVD metalorganic chemical vapour depositions, wherein the method comprises the following successive steps carried out in a reactor configured for MOCVD deposition:
a) a nucleation step comprising:
i) a step of forming non-contiguous metal nuclei by depositing a metal by MOCVD using a metalorganic precursor on said top face of the substrate, then
ii) a step of oxidising the metal of the metal nuclei, configured to form stabilized oxidised nuclei, and
b) at least one growth step comprising:
i) a step of depositing a metal by MOCVD using the metalorganic precursor to form non-contiguous nanostructures by growth of the oxidised nuclei, then
ii) a step of oxidising the deposited metal of the nanostructures formed in the preceding step to form oxidised nanostructures.