US 12,255,064 B2
Semiconductor device and method of forming the same
Chi-Chang Liu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Sep. 22, 2023, as Appl. No. 18/472,261.
Application 17/832,675 is a division of application No. 16/892,292, filed on Jun. 4, 2020, granted, now 11,462,397, issued on Oct. 4, 2022.
Application 18/472,261 is a continuation of application No. 17/832,675, filed on Jun. 5, 2022, granted, now 12,074,021.
Claims priority of provisional application 62/880,667, filed on Jul. 31, 2019.
Prior Publication US 2024/0014034 A1, Jan. 11, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); H01L 23/532 (2006.01); H01L 29/51 (2006.01)
CPC H01L 21/02211 (2013.01) [H01L 21/02126 (2013.01); H01L 23/53295 (2013.01); H01L 29/517 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, comprising:
providing a substrate having a gate stack disposed thereon, a contact disposed over and electrically connected to the gate stack, and an insulating layer disposed over the gate stack and around the contact;
introducing a silicon-containing heterocyclic compound precursor and a first silicon-free and oxygen-containing compound precursor to the substrate, so as to form a zeroth dielectric layer on the insulating layer;
forming a zeroth metal layer in the zeroth dielectric layer;
introducing a silicon-containing linear compound precursor and a second silicon-free and oxygen-containing compound precursor to the substrate to form a first dielectric layer on the zeroth dielectric layer; and
forming a first metal layer in the first dielectric layer.