| CPC H01J 37/32862 (2013.01) [B08B 7/00 (2013.01); C23C 16/4405 (2013.01); H01L 21/3065 (2013.01); H01L 21/67063 (2013.01); H01L 21/6831 (2013.01); H01J 2237/334 (2013.01); H01J 2237/335 (2013.01)] | 18 Claims |
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1. A method comprising:
etching one or more layers on a substrate electrostatically secured to an electrostatic chuck within a chamber of an etch reactor using a first plasma, wherein at least a portion of the one or more layers are covered by a photoresist having an initial pattern, and wherein the etching of the one or more layers causes an etchant byproduct to be generated and deposited on one or more surfaces of a plurality of components of the chamber;
after the etching is complete, providing a second plasma into the chamber for a first time period that is sufficient to concurrently trim the photoresist to have a target pattern and remove a target amount of the etchant byproduct from the one or more surfaces of the plurality of components of the chamber using the second plasma, wherein the second plasma is an oxygen containing plasma;
while the second plasma is provided into the chamber for the first time period, monitoring an optical emission corresponding to an amount of the etchant byproduct remaining in the chamber during removal of the etchant byproduct from the chamber using the second plasma;
responsive to determining that the optical emission satisfies a criterion, deactivating one or more chucking electrodes of the electrostatic chuck;
determining a second time period that is sufficient to electrostatically discharge the substrate using a third plasma;
responsive to deactivating the one or more chucking electrodes of the electrostatic chuck, providing the third plasma into the chamber for the determined second time period to discharge the substrate using the third plasma to release the substrate from the electrostatic chuck, wherein the third plasma is an inert, non-oxygen containing plasma; and
removing the substrate from the chamber.
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13. A system controller comprising: a memory; and
a processor coupled to the memory, the processor to:
cause one or more layers on a substrate electrostatically secured to an electrostatic chuck within a chamber of an etch reactor to be etched using a first plasma, wherein at least a portion of the one or more layers are covered by a photoresist having an initial pattern, and wherein the etching of the one or more layers causes an etchant byproduct to be generated and deposited on one or more surfaces of a plurality of components of the chamber;
after the etching is complete, cause a second plasma to be provided into the chamber for a first time period that is sufficient to concurrently trim the photoresist to have a target pattern and remove a target amount of the etchant byproduct from the one or more surfaces of the plurality of components of the chamber using the second plasma, wherein the second plasma is an oxygen containing plasma;
while the second plasma is provided into the chamber for the first time period, monitoring an optical emission corresponding to an amount of the etchant byproduct remaining in the chamber during removal of the etchant byproduct from the chamber using the second plasma;
responsive to determining that the optical emission satisfies a criterion, deactivate one or more chucking electrodes of the electrostatic chuck;
determine a second time period that is sufficient to electrostatically discharge the substrate using a third plasma;
responsive to deactivating the one or more chucking electrodes of the electrostatic chuck, cause the third plasma to be provided into the chamber for the determined second time period to discharge the substrate using the third plasma to release the substrate from the electrostatic chuck, wherein the third plasma is an inert, non-oxygen containing plasma; and
cause the substrate to be removed from the chamber.
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