US 12,255,054 B2
Methods to eliminate of deposition on wafer bevel and backside
Venkata Sharat Chandra Parimi, Sunnyvale, CA (US); Zubin Huang, Santa Clara, CA (US); Manjunath Veerappa Chobari Patil, Karnataka (IN); Nitin Pathak, Mumbai (IN); Yi Yang, San Jose, CA (US); Badri N. Ramamurthi, Los Gatos, CA (US); Truong Van Nguyen, Milpitas, CA (US); Rui Cheng, San Jose, CA (US); and Diwakar Kedlaya, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Dec. 18, 2020, as Appl. No. 17/127,201.
Prior Publication US 2022/0199373 A1, Jun. 23, 2022
Int. Cl. H01J 37/32 (2006.01); C23C 16/44 (2006.01); C23C 16/458 (2006.01); C23C 16/50 (2006.01)
CPC H01J 37/32623 (2013.01) [C23C 16/4408 (2013.01); C23C 16/4583 (2013.01); C23C 16/50 (2013.01); H01J 37/32715 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/20235 (2013.01); H01J 2237/332 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor processing chamber, comprising:
a chamber body defining a processing region and having one or more sidewalls;
a pumping liner seated on the chamber body;
a substrate support disposed within the processing region, the substrate support having an upper surface that defines a substrate seat that is recessed relative to an outer region of the upper surface;
a shadow ring disposed above the substrate seat and the upper surface, the shadow ring seated on a surface of the one or more sidewalls of the chamber body or the pumping liner and extending about a peripheral edge of the substrate seat;
a plurality of bevel purge openings defined within the substrate support proximate the peripheral edge of the substrate seat, wherein:
a bottom surface of the shadow ring is spaced apart from a top surface of the upper surface to form a purge gas flow path that extends from the plurality of bevel purge openings along an underside of the shadow ring;
a space formed between the shadow ring and the substrate seat defines a portion of a process gas flow path; and
the process gas flow path and the purge gas flow paths are in fluid communication with one another.