US 12,255,053 B2
Methods and systems for depositing a layer
Daniele Piumi, Etterbeek (BE); and Pamela Rene Fischer, Portland, OR (US)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Dec. 7, 2021, as Appl. No. 17/544,167.
Claims priority of provisional application 63/123,626, filed on Dec. 10, 2020.
Prior Publication US 2022/0189741 A1, Jun. 16, 2022
Int. Cl. C23C 16/458 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/46 (2006.01); C23C 16/509 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01)
CPC H01J 37/32449 (2013.01) [C23C 16/4408 (2013.01); C23C 16/45525 (2013.01); C23C 16/45565 (2013.01); C23C 16/4586 (2013.01); C23C 16/46 (2013.01); C23C 16/509 (2013.01); C23C 16/52 (2013.01); H01J 37/32128 (2013.01); H01J 37/32724 (2013.01); H01J 37/32935 (2013.01); H01J 2237/332 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method for depositing a layer on a substrate, the method comprising the steps:
providing a system comprising:
a reaction chamber, the reaction chamber comprising a substrate support and an upper electrode, the substrate support comprising a lower electrode; and,
a radio frequency power source coupled one of the substrate support and the upper electrode and arranged for generating a radio frequency power waveform;
positioning a substrate on the substrate support; and
executing a deposition process, the deposition process comprising:
providing one or more gaseous precursors to the reaction chamber;
generating a plasma in the reaction chamber by means of the radio frequency power waveform; and,
using a plasma control and measurement unit, monitoring a monitored plasma characteristic to determine whether or not a determined layer thickness has been deposited on the substrate;
wherein the other of the substrate support and the upper electrode is grounded,
wherein the plasma control and measurement unit is configured and arranged to control and measure one or more properties of a plasma and is located exterior the reaction chamber,
wherein the deposition process is continuous and is ended when the monitored plasma characteristic matches a pre-determined criterion, wherein the deposition process comprises continuously providing one or more gaseous precursors to the reaction chamber, and wherein the deposition process comprises continuously generating a plasma in the reaction chamber,
wherein the monitored plasma characteristic comprises the radio frequency power waveform, and wherein the pre-determined criterion comprises a spectral distribution of the radio frequency power waveform.
 
5. A method for depositing a layer on a substrate, the method comprising the steps:
providing a system comprising:
a reaction chamber, the reaction chamber comprising a substrate support and an upper electrode, the substrate support comprising a lower electrode; and,
a radio frequency power source coupled one of the substrate support and the upper electrode and arranged for generating a radio frequency power waveform;
positioning a substrate on the substrate support; and
executing a deposition process, the deposition process comprising:
providing one or more gaseous precursors to the reaction chamber;
generating a plasma in the reaction chamber by means of the radio frequency power waveform; and,
using a plasma control and measurement unit, monitoring a monitored plasma characteristic to determine whether or not a determined layer thickness has been deposited on the substrate;
wherein the other of the substrate support and the upper electrode is grounded, wherein the plasma control and measurement unit is configured and arranged to control and measure one or more properties of a plasma and is located exterior the reaction chamber,
wherein the deposition process is continuous and is ended when the monitored plasma characteristic matches a pre-determined criterion, wherein the deposition process comprises continuously providing one or more gaseous precursors to the reaction chamber, and wherein the deposition process comprises continuously generating a plasma in the reaction chamber,
wherein the monitored plasma characteristic comprises a matching impedance of an impedance matching block, wherein the impedance matching block is arranged for matching an impedance of the radio frequency power source to a load, and
wherein the matching impedance is frequency dependent, and wherein the pre-determined criterion comprises a similarity score calculated using the matching impedance and a pre-determined frequency-dependent reference impedance.