| CPC H01J 37/32165 (2013.01) [H01J 37/32128 (2013.01); H01J 37/32183 (2013.01); H01J 2237/3343 (2013.01)] | 19 Claims |

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1. A method for applying RF power in a plasma process chamber, comprising:
generating a first RF signal;
generating a second RF signal;
generating a third RF signal;
wherein the first, second, and third RF signals are generated at different frequencies;
combining the first, second and third RF signals to generate a combined RF signal, wherein a wave shape of the combined RF signal is configured to approximate a sloped square wave shape;
applying the combined RF signal to a chuck in the plasma process chamber;
wherein the wave shape of the combined RF signal is configured to compensate for a capacitance of the chuck, so that the combined RF signal that reaches a wafer supported by the chuck has a wave shape that approximates a non-sloped square wave shape.
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