US 12,255,046 B2
Ion implantation method and ion implanter
Yoji Kawasaki, Ehime (JP); and Haruka Sasaki, Ehime (JP)
Assigned to SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD., Tokyo (JP)
Filed by SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD., Tokyo (JP)
Filed on Oct. 17, 2023, as Appl. No. 18/488,854.
Application 18/488,854 is a continuation of application No. 16/512,059, filed on Jul. 15, 2019.
Claims priority of application No. 2018-135346 (JP), filed on Jul. 18, 2018.
Prior Publication US 2024/0047176 A1, Feb. 8, 2024
Int. Cl. H01J 37/317 (2006.01); H01L 21/04 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 21/66 (2006.01)
CPC H01J 37/3171 (2013.01) [H01L 21/047 (2013.01); H01L 21/26586 (2013.01); H01L 21/324 (2013.01); H01L 22/14 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An ion implantation method comprising:
preparing a wafer on which a mask is formed, wherein the mask has an opening at a predetermined position in a planar surface on the wafer;
setting, by a temperature adjustment device, a temperature of a wafer to a first temperature;
irradiating, by an ion implanter when the wafer is at the first temperature, a first ion beam to the wafer through the opening with an orientation at a predetermined implantation angle condition so as to form a first implantation profile in the wafer;
setting, by the temperature adjustment device after the ion implanter irradiates the first ion beam to the wafer, the temperature of the wafer to a second temperature that differs from the first temperature; and
irradiating, by the ion implanter when the wafer is at the second temperature, a second ion beam to the wafer through the opening with the orientation at the predetermined implantation angle condition so as to form a second implantation profile in the wafer,
wherein an ion species of the first ion beam is a same species as an ion species of the second ion beam,
wherein an energy of the second ion beam is lower than an energy of the first ion beam,
wherein the first ion beam is adjusted by a beam shaper of the ion implanter such that the first ion beam has a first angle distribution,
wherein the second ion beam is adjusted by the beam shaper such that the second ion beam has a second angle distribution, and
wherein the first angle distribution and the second angle distribution satisfy a condition that at least a full width at half maximum component of an angle distribution of an ion beam irradiated to the wafer is on-channeling, when the ion beam is irradiated onto the wafer at the predetermined position on the wafer surface in an incident direction under the implantation angle condition.