US 12,255,039 B2
Ion implanter, ion implantation method, and semiconductor device manufacturing method
Sayumi Hirose, Kanagawa (JP)
Assigned to SUMITOMO HEAVY INDUSTRIES, LTD., Tokyo (JP)
Filed by SUMITOMO HEAVY INDUSTRIES, LTD., Tokyo (JP)
Filed on Oct. 27, 2021, as Appl. No. 17/512,302.
Claims priority of application No. 2020-180902 (JP), filed on Oct. 28, 2020.
Prior Publication US 2022/0130636 A1, Apr. 28, 2022
Int. Cl. H01J 37/08 (2006.01); H01J 27/20 (2006.01); H01J 37/32 (2006.01); H01L 21/265 (2006.01)
CPC H01J 37/08 (2013.01) [H01J 27/20 (2013.01); H01J 37/32412 (2013.01); H01L 21/265 (2013.01); H01J 2237/31701 (2013.01)] 14 Claims
OG exemplary drawing
 
1. An ion implanter comprising:
a crucible provided inside a vacuum chamber, and including an internal space configured to accommodate a solid sample which is a raw material of a source gas;
a laser source provided outside the vacuum chamber, and irradiating the crucible with a laser beam;
an arc chamber including an internal space for converting the source gas into plasma to generate ions, and in which an ion beam is extracted from the internal space; and
a nozzle connecting the internal space of the crucible and the internal space of the arc chamber, and introducing the source gas vaporized in the internal space of the crucible into the internal space of the arc chamber.