US 12,254,934 B2
Memory device and compensation method of data retention thereof
Chih-Wei Hu, Miaoli County (TW); and Chih-Chang Hsieh, Hsinchu (TW)
Assigned to MACRONIX International Co., Ltd., Hsinchu (TW)
Filed by MACRONIX International Co., Ltd., Hsinchu (TW)
Filed on Mar. 9, 2023, as Appl. No. 18/180,874.
Prior Publication US 2024/0304264 A1, Sep. 12, 2024
Int. Cl. G11C 17/00 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01)
CPC G11C 16/3481 (2013.01) [G11C 16/102 (2013.01); G11C 16/26 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A compensation method of data retention, comprising:
setting a first threshold voltage and a second threshold voltage, where the second threshold voltage is greater than the first threshold voltage;
performing a reading operation on each of a plurality of programmed memory cells in a memory device, and determining whether a threshold voltage of each of the programmed memory cells falls within a range of the first threshold voltage to the second threshold voltage;
determining whether a charge loss phenomenon occurs in the programmed memory cells through the reading operation;
setting the programmed memory cells to be the charge loss memory cells when the threshold voltage of each of the programmed memory cells falls within the range of the first threshold voltage to the second threshold voltage; and
performing a refill program operation on the charge loss memory cells.