US 12,254,925 B2
Control method and controller of 3D NAND flash
Ying Huang, Wuhan (CN); Hongtao Liu, Wuhan (CN); Qiguang Wang, Wuhan (CN); and Wenzhe Wei, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Feb. 28, 2024, as Appl. No. 18/590,207.
Application 18/590,207 is a continuation of application No. 17/547,197, filed on Dec. 9, 2021, granted, now 11,948,641.
Application 17/547,197 is a continuation of application No. 16/891,028, filed on Jun. 2, 2020, granted, now 11,250,910.
Application 16/891,028 is a continuation of application No. PCT/CN2020/088769, filed on May 6, 2020.
Prior Publication US 2024/0203497 A1, Jun. 20, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); G11C 11/56 (2006.01)
CPC G11C 16/0483 (2013.01) [G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 16/3459 (2013.01); G11C 11/5671 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of programing a memory device comprising a cell, the method comprising:
applying a first program pulse to the cell;
applying middle program pulses to the cell after the application of the first program pulse, comprising applying a first middle program pulse to the cell, a pulse width of the first middle program pulse being wider than a pulse width of the first program pulse; and
applying a last program pulse to the cell after the application of the middle program pulses, wherein a pulse width of the last program pulse is wider than a pulse width of each of the middle program pulses and the first program pulse.