US 12,254,922 B2
Memory device including switching material and phase change material
Minwoo Choi, Suwon-si (KR); Young Jae Kang, Suwon-si (KR); Bonwon Koo, Suwon-si (KR); Yongyoung Park, Suwon-si (KR); Hajun Sung, Suwon-si (KR); Dongho Ahn, Suwon-si (KR); Kiyeon Yang, Suwon-si (KR); Wooyoung Yang, Suwon-si (KR); and Changseung Lee, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jan. 20, 2023, as Appl. No. 18/157,408.
Claims priority of application No. 10-2022-0097577 (KR), filed on Aug. 4, 2022; and application No. 10-2022-0176248 (KR), filed on Dec. 15, 2022.
Prior Publication US 2024/0046986 A1, Feb. 8, 2024
Int. Cl. G11C 13/00 (2006.01); H10B 63/10 (2023.01); H10B 63/00 (2023.01)
CPC G11C 13/0069 (2013.01) [G11C 13/0004 (2013.01); H10B 63/10 (2023.02); G11C 2213/30 (2013.01); H10B 63/84 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A memory device comprising:
a memory cell including a selection layer and a phase change material layer connected in series, the selection layer comprising a switching material and the phase change material layer comprising a phase change material; and
a controller configured to control a polarity, a peak value, and a shape of write pulses applied to the memory cell to change a resistance of the selection layer, to change a resistance of the phase change material, and to change the resistances of both the selection layer and the phase change material,
wherein the switching material is configured such that the resistance of the switching material is changed according to at least one of the polarity or peak value of the applied write pulse, and
wherein the phase change material is configured such that the resistance of the phase change material is changed according to the shape of the applied write pulse.