US 12,254,912 B2
Semiconductor structure, method of reading data from semiconductor structure, and method of writing data into semiconductor structure
Jiefang Deng, Hefei (CN); Wei Chang, Hefei (CN); Huihui Li, Hefei (CN); Xiang Liu, Hefei (CN); and Jong Sung Jeon, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Jan. 30, 2023, as Appl. No. 18/161,152.
Claims priority of application No. 202210689931.1 (CN), filed on Jun. 17, 2022.
Prior Publication US 2023/0410865 A1, Dec. 21, 2023
Int. Cl. G11C 11/16 (2006.01)
CPC G11C 11/161 (2013.01) [G11C 11/1673 (2013.01); G11C 11/1675 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a memory matrix, comprising a plurality of magnetic storage domains arranged in a staggered manner and comprising a first end, a second end, and an intermediate portion relative positions of the plurality of magnet storage domains in the memory matrix being able to move within the memory matrix under action of a drive current; and
a reading and writing circuit, connected to the intermediate portion of the memory matrix and configured to write data into the magnetic storage domains and read data from the magnetic storage domains.