US 12,254,906 B1
Planarization strategy in nano-sized fabrication
Cheng Bi, Shakopee, MN (US); Zhiguo Ge, Edina, MN (US); Shaun E McKinlay, Eden Prairie, MN (US); and Minzhen Cai, Eden Prairie, MN (US)
Assigned to SEAGATE TECHNOLOGY LLC, Fremont, CA (US)
Filed by Seagate Technology LLC, Fremont, CA (US)
Filed on Jun. 24, 2022, as Appl. No. 17/808,680.
Int. Cl. G11B 5/31 (2006.01); B24B 37/04 (2012.01)
CPC G11B 5/313 (2013.01) [B24B 37/042 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of planarizing a device having a surface topography with at least one material at a surface of the device, the method comprising the steps of:
depositing a stop layer over at least a portion of the at least one material, wherein the stop layer substantially retains the surface topography of the device;
depositing a sacrificial layer over at least a portion of the stop layer, wherein the sacrificial layer substantially retains the surface topography of the device;
performing a planarization process on the device, wherein the planarization process comprises the steps of:
performing a first chemical mechanical polish on a top surface of the sacrificial layer, leaving a remainder portion of the sacrificial layer;
performing a first physical removal step on the remainder portion of the sacrificial layer to physically remove at least a portion of the stop layer, and also to expose a top surface of the at least one material to form a planarized surface;
performing a second chemical mechanical polish on the planarized surface to remove the remainder portion of the sacrificial layer, and a portion of the at least one material; and
performing a second physical removal step on a remainder portion of the stop layer and a remainder portion of the at least one material, to form a planarized device.