US 12,254,262 B2
Calibration method for emulating group III-V semiconductor device and method for manufacturing group III-V semiconductor device
Chia-Chung Chen, Keelung (TW); Shufang Fu, Hsinchu County (TW); Kuan-Hung Liu, Hsinchu (TW); Chiao-Chun Hsu, Hsinchu (TW); Fu-Yu Shih, Hsinchu (TW); Chi-Feng Huang, Hsinchu County (TW); and Chu Fu Chen, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Aug. 31, 2021, as Appl. No. 17/462,747.
Prior Publication US 2023/0066030 A1, Mar. 2, 2023
Int. Cl. G06F 30/398 (2020.01); H01L 29/66 (2006.01); G06F 119/02 (2020.01); G06F 119/18 (2020.01)
CPC G06F 30/398 (2020.01) [H01L 29/66462 (2013.01); G06F 2119/02 (2020.01); G06F 2119/18 (2020.01)] 20 Claims
OG exemplary drawing
 
1. A calibration method for emulating a Group III-V semiconductor device comprising:
establishing a process emulation program according to an actual process flow of the Group III-V semiconductor device and running the process emulation program to obtain an emulated Group III-V semiconductor device with emulated electrical performances;
performing actual tape-out according to the actual process flow of the Group III-V semiconductor device to form actual Group III-V semiconductor devices;
obtaining actual electrical performances of the actual Group III-V semiconductor devices and comparing the actual electrical performances with the emulated electrical performances to find discrepancies between the actual electrical performances and the emulated electrical performances;
performing a failure analysis to the actual Group III-V semiconductor devices to identify one or more locations where failure is found; and
calibrating the process emulation program by inserting one or more traps at the locations in the emulated Group III-V semiconductor device to obtain calibrated emulated electrical performances of the emulated Group III-V semiconductor device until the calibrated emulated electrical performances are consistent with the actual electrical performances.