US 12,254,258 B2
Critical dimension uniformity
Chi-Ta Lu, Sanxing Township (TW); and Chi-Ming Tsai, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jul. 27, 2023, as Appl. No. 18/360,445.
Application 18/360,445 is a division of application No. 17/358,407, filed on Jun. 25, 2021, granted, now 11,763,057.
Application 17/358,407 is a division of application No. 16/175,687, filed on Oct. 30, 2018, granted, now 11,055,464, issued on Jul. 6, 2021.
Claims priority of provisional application 62/718,805, filed on Aug. 14, 2018.
Prior Publication US 2023/0367943 A1, Nov. 16, 2023
Int. Cl. G06F 30/39 (2020.01); G06F 111/06 (2020.01)
CPC G06F 30/39 (2020.01) [G06F 2111/06 (2020.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
shrinking a mask pattern to form a shrunk pattern;
identifying a centerline for a first feature of the shrunk pattern;
snapping the centerline of the first feature to a grid; and
after the snapping of the centerline of the first feature to the grid, adjusting a critical dimension of the first feature.