US 12,254,257 B2
High voltage guard ring semiconductor device and method of forming same
Ming-Cheng Syu, Hsinchu (TW); Po-Zeng Kang, Hsinchu (TW); Yung-Hsu Chuang, Hsinchu (TW); Shu-Chin Tai, Hsinchu (TW); Wen-Shen Chou, Hsinchu (TW); and Yung-Chow Peng, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jan. 21, 2022, as Appl. No. 17/581,810.
Claims priority of provisional application 63/226,825, filed on Jul. 29, 2021.
Prior Publication US 2023/0043245 A1, Feb. 9, 2023
Int. Cl. G06F 30/30 (2020.01); G06F 30/38 (2020.01); G06F 30/392 (2020.01); H01L 27/02 (2006.01)
CPC G06F 30/38 (2020.01) [G06F 30/392 (2020.01); H01L 27/0207 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
forming M_1st segments in a first metallization layer which are electrically conductive, the forming M_1st segments including:
forming first and second M_1st segments for which corresponding long axes extend in a first direction and are substantially collinear, the first and second M_1st segments being free from another instance of M_1st segment being between the first and second M_1st segments; and
where the first and second M_1st segments are designated for corresponding voltage values having a difference equal to or less than a reference value, separating the first and second M_1st segments by a first gap; or
where the first and second M_1st segments are designated for corresponding voltage values having a difference greater than the reference value, separating the first and second M_1st segments by a second gap, a second size of the second gap being greater than a first size of the first gap, wherein:
before the forming M_1st segments, the method further comprises:
forming active regions in a substrate layer, the substrate layer being below the first metallization layer, the forming active regions including:
forming first and second active regions for which corresponding long axes are substantially collinear, the first and second active regions being free from another instance of an active region being between the first and second active regions; and
separating the first and second active regions by a third gap, a third size of the third gap being approximately equal to, or greater than, the second size of the second gap.