US 12,254,218 B2
Read schemes with adjustment for neighboring word line sanitization
Md Raquibuzzaman, Huntsville, AL (US); Sujjatul Islam, San Jose, CA (US); and Ravi J. Kumar, Redwood City, CA (US)
Assigned to Sandisk Technologies, Inc., Milpitas, CA (US)
Filed by SanDisk Technologies LLC, Addison, TX (US)
Filed on Jul. 27, 2023, as Appl. No. 18/360,252.
Claims priority of provisional application 63/419,600, filed on Oct. 26, 2022.
Prior Publication US 2024/0143229 A1, May 2, 2024
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0659 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
a control circuit configured to connect to non-volatile memory cells, the control circuit configured to:
receive a read command directed to data stored in non-volatile memory cells of a first word line, determine that a second word line adjacent to the first word line is sanitized such that non-volatile memory cells of the second word line have threshold voltages increased from programmed threshold voltages corresponding to programmed data to one or more threshold voltage range that does not correspond to the programmed data, select an adjusted read voltage for a read operation directed to the non-volatile memory cells of the first word line based on the determination and perform the read operation using the adjusted read voltage.