US 12,253,804 B2
Method of forming photoresist pattern and projection exposure apparatus
Kanyu Cao, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Jul. 21, 2022, as Appl. No. 17/814,017.
Application 17/814,017 is a continuation of application No. PCT/CN2022/092049, filed on May 10, 2022.
Claims priority of application No. 202111515776.3 (CN), filed on Dec. 13, 2021.
Prior Publication US 2023/0185201 A1, Jun. 15, 2023
Int. Cl. G03F 7/20 (2006.01); G03F 7/00 (2006.01); G03F 7/16 (2006.01)
CPC G03F 7/7015 (2013.01) [G03F 7/16 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method of forming a photoresist pattern, applied to a projection exposure apparatus comprising a projection objective, a light refracting plate being connected to an objective surrounding structure surrounding a bottom of the projection objective, and a first medium layer provided by the objective surrounding structure, wherein the first medium layer is disposed between the light refracting plate and the projection objective and contacts the light refracting plate and the projection objective, a thickness of the first medium layer is less than a thickness of the light refracting plate, and the light refracting plate is made of a polyimide film, and the method comprising:
providing a photoresist layer, and disposing the photoresist layer under the projection objective, wherein the light refracting plate is located between the photoresist layer and the projection objective; and
performing an exposure processing on the photoresist layer through the projection objective and the light refracting plate, and forming an exposure image in the photoresist layer, wherein the light refracting plate is configured to reduce a wavelength of optical waves entering the photoresist layer.