US 12,253,800 B2
EUV metallic resist performance enhancement via additives
An-Ren Zi, Hsinchu (TW); Joy Cheng, Taoyuan (TW); and Ching-Yu Chang, Yilang County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 30, 2021, as Appl. No. 17/364,020.
Application 17/364,020 is a continuation of application No. 16/009,795, filed on Jun. 15, 2018, granted, now 11,054,742.
Prior Publication US 2021/0325782 A1, Oct. 21, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/004 (2006.01)
CPC G03F 7/0042 (2013.01) [G03F 7/0045 (2013.01); G03F 7/0047 (2013.01); G03F 7/0048 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A metallic photoresist material, comprising:
a metallic core group surrounded by multiple ligands;
a solvent;
a photoacid generator, wherein the photoacid generator includes a cation component having a chemical formula selected from the group consisting of:

OG Complex Work Unit Chemistry
and
a photo base generator, wherein the photo base generator has a chemical formula selected from the group consisting of:

OG Complex Work Unit Chemistry